BAV199T/R High-Speed Center-Tapped Doubler
From Philips Semiconductors / NXP Semiconductors
@I(F) (A) (Test Condition) | 10m |
@I(FM) (A) (Test Condition) | 50m |
@I(R) (A) (Test Condition) | 10m |
@Temp. (°C) (Test Condition) | 150 |
@V(R) (V)(Test Condition) | 75 |
@t(w) (s) (Test Condition) | 1.0u |
I(FSM) Max.(A) Pk.Fwd.Sur.Cur. | 4.0 |
I(O) Max.(A) Output Current | 215m |
I(RM) Max.(A) Pk. Rev. Current | 80n |
I(RM) Max.(A) Reverse Current | 5.0n |
Package | SOT-23 |
Semiconductor Material | Silicon |
V(FM) Max.(V) Forward Voltage | 1.1 |
V(RRM)(V) Rep.Pk.Rev. Voltage | 75 |
t(rr) Max.(s) Rev.Rec. Time | 3.0u |