BAV199T/R
High-Speed Center-Tapped Doubler

From Philips Semiconductors / NXP Semiconductors

@I(F) (A) (Test Condition)10m
@I(FM) (A) (Test Condition)50m
@I(R) (A) (Test Condition)10m
@Temp. (°C) (Test Condition)150
@V(R) (V)(Test Condition)75
@t(w) (s) (Test Condition)1.0u
I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0
I(O) Max.(A) Output Current215m
I(RM) Max.(A) Pk. Rev. Current80n
I(RM) Max.(A) Reverse Current5.0n
PackageSOT-23
Semiconductor MaterialSilicon
V(FM) Max.(V) Forward Voltage1.1
V(RRM)(V) Rep.Pk.Rev. Voltage75
t(rr) Max.(s) Rev.Rec. Time3.0u

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