2N5551T/R Si NPN Lo-Pwr BJT
From Philips Semiconductors / NXP Semiconductors
| Absolute Max. Power Diss. (W) | 350m |
| C(obo) (Max) (F) | 6.0p |
| I(C) Abs.(A) Collector Current | 600m |
| I(CBO) Max. (A) | 50n |
| Military | N |
| Package | TO-92 |
| V(BR)CBO (V) | 180 |
| V(BR)CEO (V) | 160 |
| f(T) Min. (Hz) Transition Freq | 100M |
