STI250 Si PNP Power BJT
From Semiconductor Technology, Inc.
| @I(C) (A) (Test Condition) | 200m |
| @V(CE) (V) (Test Condition) | 1.0 |
| Absolute Max. Power Diss. (W) | 15 |
| I(CBO) Max. (A) | 100n |
| Military | N |
| Package | TO-126 |
| V(BR)CBO (V) | 80 |
| V(BR)CEO (V) | 8.0 |
| f(T) Min. (Hz) Transition Freq | 40M |
| h(FE) Max. Current gain. | 200 |
| h(FE) Min. Static Current Gain | 40 |
