IRFE110-JQR-B 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
From Semelab Plc.
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 7 mJ |
| Channel Type | N-CHANNEL |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 3.5 A |
| Drain-source On Resistance-Max | 0.6900 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | HERMETIC SEALED, LCC-18 |
| Number of Elements | 1 |
| Number of Terminals | 16 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Pulsed Drain Current-Max (IDM) | 14 A |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | QUAD |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
