K9WAG08U1M-IIB00 256M X 8 FLASH 2.7V PROM, 20 ns, PBGA52
From Samsung Semiconductor Division
Status | ACTIVE |
Access Time-Max (tACC) | 20 ns |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Memory Density | 2.15E9 deg |
Memory IC Type | FLASH 2.7V PROM |
Memory Width | 8 |
Mfr Package Description | 12 X 17 MM, 1 MM PITCH, TLGA-52 |
Number of Functions | 1 |
Number of Terminals | 52 |
Number of Words | 2.68E8 words |
Number of Words Code | 256M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 256M X 8 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | NOT SPECIFIED |
Terminal Form | BALL |
Terminal Pitch | 2 mm |
Terminal Position | BOTTOM |