SGH10N60RUFD 16 A, 600 V, N-CHANNEL IGBT
From Samsung Semiconductor Division
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Collector Current-Max (IC) | 16 A |
| Collector-emitter Voltage-Max | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Mfr Package Description | TO-3P, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | MOTOR CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 162 ns |
| Turn-on Time-Nom (ton) | 27 ns |
