K9WAG08U1M-IIB00 256M X 8 FLASH 2.7V PROM, 20 ns, PBGA52
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Time-Max (tACC) | 20 ns |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 2.15E9 deg |
| Memory IC Type | FLASH 2.7V PROM |
| Memory Width | 8 |
| Mfr Package Description | 12 X 17 MM, 1 MM PITCH, TLGA-52 |
| Number of Functions | 1 |
| Number of Terminals | 52 |
| Number of Words | 2.68E8 words |
| Number of Words Code | 256M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 256M X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | BALL |
| Terminal Pitch | 2 mm |
| Terminal Position | BOTTOM |
