K9F6408U0M-TCB00
8M X 8 FLASH 2.7V PROM, 35 ns, PDSO40

From Samsung Semiconductor Division

StatusACTIVE
Access Time-Max (tACC)35 ns
Memory Density6.71E7 deg
Memory IC TypeFLASH 2.7V PROM
Memory Width8
Mfr Package Description0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40
Number of Functions1
Number of Terminals40
Number of Words8.39E6 words
Number of Words Code8M
Operating ModeASYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization8M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)2.7 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FormGULL WING
Terminal Pitch0.8000 mm
Terminal PositionDUAL

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