K9F5608D0C-HCB00 32M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Time-Max (tACC) | 30 ns |
| Lead Free | Yes |
| Memory Density | 2.68E8 deg |
| Memory IC Type | FLASH 2.7V PROM |
| Memory Width | 8 |
| Mfr Package Description | 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TBGA-63 |
| Number of Functions | 1 |
| Number of Terminals | 63 |
| Number of Words | 3.36E7 words |
| Number of Words Code | 32M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 32M X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 2.9 V |
| Supply Voltage-Min (Vsup) | 2.4 V |
| Supply Voltage-Nom (Vsup) | 2.65 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
