K9F1216D0A-HCB00
32M X 16 FLASH 2.7V PROM, 30 ns, PBGA63

From Samsung Semiconductor Division

StatusACTIVE
Access Time-Max (tACC)30 ns
Lead FreeYes
Memory Density5.37E8 deg
Memory IC TypeFLASH 2.7V PROM
Memory Width16
Mfr Package DescriptionTBGA-63
Number of Functions1
Number of Terminals63
Number of Words3.36E7 words
Number of Words Code32M
Operating ModeASYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization32M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)2.9 V
Supply Voltage-Min (Vsup)2.4 V
Supply Voltage-Nom (Vsup)2.65 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishNOT SPECIFIED
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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