K4D26323QV-VC220 4M X 32 DDR DRAM, 0.45 ns, PBGA144
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.4500 ns |
| Lead Free | Yes |
| Memory Density | 1.34E8 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 32 |
| Mfr Package Description | LEAD FREE, FBGA-144 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 144 |
| Number of Words | 4.19E6 words |
| Number of Words Code | 4M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 65 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 4M X 32 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH |
| Supply Voltage-Max (Vsup) | 2.1 V |
| Supply Voltage-Min (Vsup) | 1.9 V |
| Supply Voltage-Nom (Vsup) | 2 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
