K4B2G1646C-HCF80 128M X 16 DDR DRAM, 0.3 ns, PBGA96
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Mode | MULTI BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.3000 ns |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 2.15E9 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 16 |
| Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 96 |
| Number of Words | 1.34E8 words |
| Number of Words Code | 128M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 128M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Supply Voltage-Max (Vsup) | 1.58 V |
| Supply Voltage-Min (Vsup) | 1.42 V |
| Supply Voltage-Nom (Vsup) | 1.5 V |
| Surface Mount | Yes |
| Temperature Grade | OTHER |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
