Product Datasheet Search Results:

STU1N120.pdf11 Pages, 159 KB, Original
STU1N120
Stmicroelectronics, Inc.
0.5 A, 1200 V, 38 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

St.com/STU1N120
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"38 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","F...
1508 Bytes - 22:59:44, 27 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IKB01N120H2.pdf0.411Request
IGD01N120H2.pdf0.941Request
IKP01N120H2.pdf0.801Request
IGB01N120H2.pdf1.151Request
IGP01N120H2.pdf0.941Request
IXTP1N120P.pdf0.071Request
IXTA1N120P.pdf0.071Request
IXTP1N120P.pdf0.141Request
IXTA1N120P.pdf0.141Request
1N1206.pdf0.071Request
1N1205.pdf0.071Request