Toshiba.co.jp/SSM3K315T
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TSM, 2-3S1A, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"6 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1466 Bytes - 20:13:53, 20 June 2024
Toshiba.co.jp/SSM3K315T(T5L,F,T)
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"6 A","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"27.6 mOhms","Package \/ Case":"TSM-3","Configuration":"Single","RoHS":"Details","Manufacturer":"Toshiba"}...
1258 Bytes - 20:13:53, 20 June 2024
Toshiba.semicon-storage.com/SSM3K315T(TE85L,F)
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4.5V Drive","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Catalog Drawings":"TSM Top TSM Side","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"6A (Ta)","Gate Charge (Qg) @ Vgs":"10.1nC @ 10V","Product Photos":"SC59","Product Training Modules":"Small Signal MOSFET","Rds On (Max) @ Id, Vgs":"27.6 mOhm @ 4A, 10V","Datasheets":"SSM3K315T - Mosfets Prod Guide","FET Type":"MOSFET N-Channel, Metal Oxide...
2021 Bytes - 20:13:53, 20 June 2024