{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 12 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"4.5 S \/ 2.7 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 2.3 A","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"140 mOhms","Package \/ Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7900 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"0.8(W)","Operating Temp Range":"-55C to 150C","Package Type":"UFM","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"1 S \/ 0.5 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 1.1 A","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"610 mOhms","Package \/ Case":"SOT-323-3","Vgs - Gate-Source Breakdown Volta...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4490 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","T...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 20 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"2.7 S \/ 1.3 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 1.7 A","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"189 mOhms","Package \/ Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage...

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, 2-2U1A, 3 PIN","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.8 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR",...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1930 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1170 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Tra...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.8(W)","Continuous Drain Current":"2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"UFM","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"3.1 S \/ 1.6 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 2 A","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"160 mOhms","Package \/ Case":"SOT-323-3","Vgs - Gate-Source Breakdown Volta...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"1.5 S \/ 0.8 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 1.4 A","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"360 mOhms","Package \/ Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"UFM-SSM3J","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 100\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"UFM","Datasheets":"SSM3J112TU - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"390 mOhm @ 500mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"500mW","Package \/ Case":"3-SMD, Flat Leads","Mounting Type":"Surface M...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.5V Drive","Product Photos":"UFM-SSM3J","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 1mA","Input Capacitance (Ciss) @ Vds":"331pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"UFM","Catalog Drawings":"UFM Top UFM Side","Datasheets":"SSM3J114TU - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"149 mOhm @ 600mA, 4V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.5V Drive","Vgs(th) (Max) @ Id":"1V @ 1mA","Catalog Drawings":"UFM Top UFM Side","Package \/ Case":"3-SMD, Flat Leads","Current - Continuous Drain (Id) @ 25\u00b0C":"1.8A (Ta)","Gate Charge (Qg) @ Vgs":"7.7nC @ 4V","Product Photos":"UFM-SSM3J","Product Training Modules":"Small Signal MOSFET","Rds On (Max) @ Id, Vgs":"149 mOhm @ 600mA, 4V","Datasheets":"SSM3J114TU - Mosfets Prod Guide","FET Type":"MOSFET P-Channel, Metal Oxide","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"UFM-SSM3J","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.6V @ 1mA","Series":"-","Standard Package":"3,000","Supplier Device Package":"UFM","Datasheets":"SSM3J117TU - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"117 mOhm @ 1A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"500mW","Package \/ Case":"3-SMD, Flat Leads","Mounting Type":"Surface Mount","Dra...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"UFM-SSM3J","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Input Capacitance (Ciss) @ Vds":"137pF @ 15V","Series":"-","Standard Package":"1","Supplier Device Package":"UFM","Datasheets":"SSM3J118TU -","Rds On (Max) @ Id, Vgs":"240 mOhm @ 650mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"800mW","Packa...