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- SIGC158T120R3EX1SA6
- Infineon Technologies Ag
- Trans IGBT Chip N-CH 1200V 3-Pin Die Wafer
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Infineon.com/SIGC158T120R3EX1SA6
{"Operating Temperature (Min)":"-55C","Mounting":"Not Required","Operating Temperature (Max)":"175C","Gate to Emitter Voltage (Max)":"\u00b120(V)","Channel Type":"N","Packaging":"Wafer","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"Die","Configuration":"Single","Pin Count":"3"}...
1487 Bytes - 17:48:07, 30 November 2024
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SIGNAL_DESCRIPTION_ARC_WELDING_PRODUCTS_IRC5_DESIGN_2006.pdf | 0.83 | 1 | Request | |
INSTRUCTION_FEX631_FET632_RETROFIT_CONVERSION_CONFIGURATION_PARAMETERIZATION_INSTRUCTION_FOR_FXE_FXM_FEP300_FEP500_REMOTE_MOUNT_DESIGN_AND_INTEGRAL_MOUNT_DESIGN.pdf | 8.47 | 1 | Request | |
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SYSTEM_PLUS_SYSTEM_2N_ELECTRICAL_DISTRIBUTION_DATA_CENTER_DESIGN_IEC_0_5_MW_IT_LOAD_DESIGN.pdf | 1.80 | 1 | Request | |
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