Product Datasheet Search Results:
6 Pages, 362 KB, Original- SI4410DY
- Fairchild Semiconductor
- MOSFET N-CH 30V 10A 8-SOIC
3 Pages, 190 KB, Original- SI4410DY_NL
- Fairchild Semiconductor
- Single N-Channel, Logic Level, PowerTrench MOSFET
8 Pages, 120 KB, Original- SI4410DYPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 30V 10A 8-Pin SOIC Tube
8 Pages, 89 KB, Original- SI4410DYTRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 30V 10A 8-Pin SOIC T/R
5 Pages, 254 KB, Original- DEF-SI4410DYTRPBF
- International Rectifier
- DEF-SI4410DYTRPBF
8 Pages, 89 KB, Original- SI4410DY
- International Rectifier
- MOSFET N-CH 30V 10A 8-SOIC
8 Pages, 120 KB, Original- SI4410DYPBF
- International Rectifier
- MOSFET N-CH 30V 10A 8-SOIC - SI4410DYPBF
8 Pages, 89 KB, Original- SI4410DYTR
- International Rectifier
- 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
8 Pages, 120 KB, Original- SI4410DYTRPBF
- International Rectifier
- MOSFET N-CH 30V 10A 8-SOIC - SI4410DYTRPBF
12 Pages, 369 KB, Original- SI4410DY
- Nxp Semiconductors
- MOSFET N-CH 30V 10A SOT96-1 - SI4410DY,518
12 Pages, 369 KB, Original- SI4410DY,518
- Nxp Semiconductors
- MOSFET N-CH 30V 10A SOT96-1 - SI4410DY,518
5 Pages, 114 KB, Original- SI4410DY/T3
- Nxp Semiconductors
- Trans MOSFET N-CH 30V 10A 8-Pin SO T/R
Product Details Search Results:
Fairchildsemi.com/SI4410DY
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1350pF @ 15V","Series":"PowerTrench\u00ae","Standard Package":"1","Supplier Device Package":"8-SOIC N","Datasheets":"SI4410DY","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 10A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"1W","Package / Case":"8-SOIC (0.154\", 3.90mm Wi...
1621 Bytes - 14:34:05, 13 November 2024
Infineon.com/SI4410DYPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1493 Bytes - 14:34:05, 13 November 2024
Infineon.com/SI4410DYTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1466 Bytes - 14:34:05, 13 November 2024
Irf.com/DEF-SI4410DYTRPBF
750 Bytes - 14:34:05, 13 November 2024
Irf.com/SI4410DY
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1585pF @ 15V","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"SI4410DY","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 10A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":...
1648 Bytes - 14:34:05, 13 November 2024
Irf.com/SI4410DYPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Single","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Datasheets":"SI4410DYPbF","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 10A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide"...
1758 Bytes - 14:34:05, 13 November 2024
Irf.com/SI4410DYTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Ta)","Gate Charge (Qg) @ Vgs":"45nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 10A, 10V","Datasheets":"SI4410DYPbF","FET Type":"MOSFET N-Channel,...
1980 Bytes - 14:34:05, 13 November 2024
Nxp.com/SI4410DY
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10 A","Mounting":"Surface Mount","Drain-Source On-Volt":"30 V","Pin Count":"8","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SO","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.0135 ohm","Number of Elements":"1"}...
1433 Bytes - 14:34:05, 13 November 2024
Nxp.com/SI4410DY,518
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"13.5 mOhm @ 10A, 10V","FET Feature":"Logic Level Gate","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"TrenchMOS\u2122","Standard Package":"2,500","Supplier Device Package":"8-SO","Other Names":"934056382518 SI4410DY /T3 SI4410DY /T3-ND","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"SI4410DY","Power - Max":"2.5W","Package / Case":"8-SOIC (0.154...
1656 Bytes - 14:34:05, 13 November 2024
Nxp.com/SI4410DY/T3
738 Bytes - 14:34:05, 13 November 2024
Vishay.com/SI4410DY-REVA
706 Bytes - 14:34:05, 13 November 2024
Vishay.com/SI4410DY-T1-E3
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"10 A","Transistor Element Material":"SILICON","Number of Elements":"1","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuratio...
1401 Bytes - 14:34:05, 13 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SI4410DY.pdf | 0.09 | 1 | Request |
