SP8K80TB
0.5 A, 500 V, 11.7 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From ROHM Co., Ltd.

StatusACTIVE
Avalanche Energy Rating (Eas)0.0170 mJ
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)0.5000 A
Drain-source On Resistance-Max11.7 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionSOP-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)2 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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