SPF-2086T
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

From RF Micro Devices, Inc. (RFMD)

StatusDISCONTINUED
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min7 V
Drain Current-Max (ID)0.0850 A
FET TechnologyHIGH ELECTRON MOBILITY
Highest Frequency BandX BAND
Number of Elements1
Number of Terminals4
Operating ModeDEPLETION
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleDISK BUTTON
Power Gain-Min (Gp)8.4 dB
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionRADIAL
Transistor ApplicationSWITCHING
Transistor Element MaterialGALLIUM ARSENIDE
Transistor TypeRF SMALL SIGNAL

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