FPD750SOT89ESR GaAs, N-CHANNEL, RF POWER, HEMFET
From RF Micro Devices, Inc. (RFMD)
| Status | DISCONTINUED |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 8 V |
| FET Technology | HIGH ELECTRON MOBILITY |
| Mfr Package Description | GREEN PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 1.8 W |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF POWER |
