FPD750SOT343E S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
From RF Micro Devices, Inc. (RFMD)
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 6 V |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | S BAND |
| Mfr Package Description | LEAD FREE, PLASTIC PACKAGE-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 1.1 W |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF POWER |
