FPD750SOT343CE S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
From RF Micro Devices, Inc. (RFMD)
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 6 V |
EU RoHS Compliant | Yes |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | S BAND |
Lead Free | Yes |
Mfr Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.1 W |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF POWER |