FPD750SOT343
Si, N-CHANNEL, RF POWER, HEMFET

From RF Micro Devices, Inc. (RFMD)

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min6 V
FET TechnologyHIGH ELECTRON MOBILITY
Mfr Package DescriptionSOT-343, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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