FPD200-000SQ X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From RF Micro Devices, Inc. (RFMD)
Status | DISCONTINUED |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 8 V |
EU RoHS Compliant | Yes |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | X BAND |
Lead Free | Yes |
Mfr Package Description | ROHS COMPLIANT, DIE-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | UNCASED CHIP |
Power Dissipation Ambient-Max | 0.5000 W |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | NO LEAD |
Terminal Position | UPPER |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF SMALL SIGNAL |