FPD200-000S3 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From RF Micro Devices, Inc. (RFMD)
| Status | DISCONTINUED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 8 V |
| EU RoHS Compliant | Yes |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | X BAND |
| Lead Free | Yes |
| Mfr Package Description | ROHS COMPLIANT, DIE-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | UNCASED CHIP |
| Power Dissipation Ambient-Max | 0.5000 W |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF SMALL SIGNAL |
