FPD1500 X BAND, Si, N-CHANNEL, RF POWER, HEMFET
From RF Micro Devices, Inc. (RFMD)
Status | ACTIVE |
Channel Type | N-CHANNEL |
DS Breakdown Voltage-Min | 10 V |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | X BAND |
Mfr Package Description | DIE |
Number of Elements | 1 |
Operating Mode | DEPLETION |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | UNCASED CHIP |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | UPPER |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF POWER |