FPD1050 X BAND, Si, N-CHANNEL, RF POWER, HEMFET
From RF Micro Devices, Inc. (RFMD)
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 10 V |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | X BAND |
| Mfr Package Description | DIE |
| Number of Elements | 1 |
| Operating Mode | DEPLETION |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | UNCASED CHIP |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
