UPD44645182AF5-E40-FQ1-A 4M X 18 QDR SRAM, 0.45 ns, PBGA165
From Renesas Electronics
Status | EOL/LIFEBUY |
Access Time-Max (tACC) | 0.4500 ns |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Memory Density | 7.55E7 deg |
Memory IC Type | QDR SRAM |
Memory Width | 18 |
Mfr Package Description | 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165 |
Number of Functions | 1 |
Number of Terminals | 165 |
Number of Words | 4.19E6 words |
Number of Words Code | 4M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 70 Cel |
Operating Temperature-Min | 0.0 Cel |
Organization | 4M X 18 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 1.9 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | BALL |
Terminal Pitch | 1 mm |
Terminal Position | BOTTOM |