NE85630-T1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From Renesas Electronics
| Status | ACTIVE |
| Collector Current-Max (IC) | 0.1000 A |
| Collector-base Capacitance-Max | 1.5 pF |
| Collector-emitter Voltage-Max | 12 V |
| Configuration | SINGLE |
| Highest Frequency Band | L BAND |
| Mfr Package Description | PLASTIC PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.1500 W |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | RF SMALL SIGNAL |
| Transition Frequency-Nom (fT) | 4500 MHz |
