NE5500134
0.5 A, 20 V, N-CHANNEL, Si, POWER, MOSFET

From Renesas Electronics

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)0.5000 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionPOWER, MINIMOLD PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max10 W
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormFLAT
Terminal PositionSINGLE
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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