NE3517S03-T1C-A K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
From Renesas Electronics
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 3 V |
Drain Current-Max (ID) | 0.0150 A |
EU RoHS Compliant | Yes |
FET Technology | HETERO-JUNCTION |
Highest Frequency Band | K BAND |
Lead Free | Yes |
Mfr Package Description | LEAD FREE, PLASTIC, S03, MICRO-X-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | MICROWAVE |
Power Gain-Min (Gp) | 11.5 dB |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | FLAT |
Terminal Position | UNSPECIFIED |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF SMALL SIGNAL |