NE3517S03-T1C-A
K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET

From Renesas Electronics

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min3 V
Drain Current-Max (ID)0.0150 A
EU RoHS CompliantYes
FET TechnologyHETERO-JUNCTION
Highest Frequency BandK BAND
Lead FreeYes
Mfr Package DescriptionLEAD FREE, PLASTIC, S03, MICRO-X-4
Number of Elements1
Number of Terminals4
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleMICROWAVE
Power Gain-Min (Gp)11.5 dB
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionUNSPECIFIED
Transistor ApplicationAMPLIFIER
Transistor Element MaterialGALLIUM ARSENIDE
Transistor TypeRF SMALL SIGNAL

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