NE3514S02-T1C-A K BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
From Renesas Electronics
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| China RoHS Compliant | Yes |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 3 V |
| Drain Current-Max (ID) | 0.0150 A |
| EU RoHS Compliant | Yes |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | K BAND |
| Lead Free | Yes |
| Mfr Package Description | LEAD FREE, PLASTIC, MICRO-X-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | MICROWAVE |
| Power Gain-Min (Gp) | 8 dB |
| Surface Mount | Yes |
| Terminal Finish | TIN BISMUTH |
| Terminal Form | FLAT |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF SMALL SIGNAL |
