HN58V65AP-10E 8K X 8 EEPROM 3V, 100 ns, PDIP28
From Renesas Electronics
| Status | EOL/LIFEBUY |
| Access Time-Max (tACC) | 100 ns |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 65536 deg |
| Memory IC Type | EEPROM 3V |
| Memory Width | 8 |
| Mfr Package Description | 0.600 INCH, LEAD FREE, PLASTIC, DIP-28 |
| Number of Functions | 1 |
| Number of Terminals | 28 |
| Number of Words | 8192 words |
| Number of Words Code | 8K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 8K X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 5.5 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54 mm |
| Terminal Position | DUAL |
| Write Cycle Time-Max (tWC) | 10 ms |
