Product Datasheet Search Results:
1 Pages, 56 KB, Scan- RJK0654DPB
- Renesas Technology
- MOSFET
9 Pages, 152 KB, Original- RJK0654DPB-00#J5
- Renesas Electronics
- MOSFET N-CH 60V LFPAK - RJK0654DPB-00#J5
7 Pages, 128 KB, Original- RJK0654DPB-00-J5
- Renesas Electronics
- 30 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/RJK0654DPB
988 Bytes - 17:35:47, 28 November 2024
Renesas.com/RJK0654DPB-00#J5
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"-","Package / Case":"SC-100, SOT-669","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Ta)","Gate Charge (Qg) @ Vgs":"27nC @ 10V","Product Photos":"5-LFPAK, SC-100","PCN Assembly/Origin":"Wafer Fabrication Site Change 02/Oct/2013 Power Transistors Relocation 12/Nov/2013","Rds On (Max) @ Id, Vgs":"8.3 mOhm @ 15A, 10V","Datasheets":"RJK0654DPB","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drai...
1848 Bytes - 17:35:47, 28 November 2024
Renesas.com/RJK0654DPB-00-J5
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0083 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1585 Bytes - 17:35:47, 28 November 2024
