Product Datasheet Search Results:

RA08N1317M-01.pdf9 Pages, 87 KB, Original
RA08N1317M-01
Mitsubishi Electric & Electronics Usa, Inc.
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
RA08N1317M-01.pdf9 Pages, 87 KB, Original
RA08N1317M-01
Mitsubishi Electric Semiconductor
135 - 175 MHz 8 W 9.6 V, 2 Stage Amp. for Portable Radio

Product Details Search Results:

Mitsubishichips.com/RA08N1317M-01
{"Status":"DISCONTINUED","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Mfr Package Description":"30 X 10 MM, 5.40 MM HEIGHT, MODULE-4","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"90 Cel","Operating Frequency-Min":"135 MHz","Construction":"COMPONENT","VSWR-Max":"4","Input Power-Max (CW)":"14.77 dBm"}...
1206 Bytes - 00:29:08, 25 November 2024

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