Datasheet.Directory

{"C(iss) Max. (F)":"2.4n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"15.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"400m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"400m"}...

{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"600","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"400m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...

{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"600","I(D) Abs. Drain Current (A)":"16.5","Military":"N","r(DS)on Max. (Ohms)":"400m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"14.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"450m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247","Military":"N","r(DS)on Max. (Ohms)":"450m"}...

{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"600","I(D) Abs. Drain Current (A)":"15.5","Military":"N","r(DS)on Max. (Ohms)":"450m"}...

{"V(CE)sat Max.(V)":"500m","P(D) Max.(W) Power Dissipation":"250m","CTR Min.(%)Current Trans.Ratio":"20","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"25m","t(resp) Max.(s) Response Time":"3.0u","Number of Channels":"1","Package":"DIP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"100","@I(F) (A) (Test Condition)":"10m","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Viso Max.(V) Isolation Voltage":"1.5k","I(F) Max. (A) Forward Curr...

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Mfr Package Description":"6 PIN","Input Cont Forward Current-Max":"60 mA","Current Transfer Ratio-Nom":"50 %","Optoelectronic Device Type":"AC INPUT-DARLINGTON OUTPUT","Isolation Voltage-Max":"5000 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...