Product Datasheet Search Results:
1 Pages, 35 KB, Original- PMBFJ112T/R
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
9 Pages, 82 KB, Original- PMBFJ112
- Nxp Semiconductors
- JFET N-CH 40V 5MA SOT23 - PMBFJ112,215
9 Pages, 82 KB, Original- PMBFJ112,215
- Nxp Semiconductors
- JFET N-CH 40V 5MA SOT23 - PMBFJ112,215
3 Pages, 82 KB, Scan- PMBFJ112TRL13
- Nxp
- 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
8 Pages, 46 KB, Original- PMBFJ112T/R
- Philips Semiconductors / Nxp Semiconductors
- TRANS JFET N-CH 40V 3SOT23 T/R
4 Pages, 71 KB, Original- PMBFJ112
- Philips Semiconductors / Nxp Semiconductors
- N-Channel Junction FET
8 Pages, 46 KB, Original- PMBFJ112T/R
- Philips Semiconductors / Nxp Semiconductors
- TRANS JFET N-CH 40V 3SOT23 T/R
Product Details Search Results:
Nxp.com/PMBFJ112
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"50 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"40 V","Transisto...
1398 Bytes - 09:23:40, 29 November 2024
Nxp.com/PMBFJ112,215
{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","PCN Design/Specification":"Resin Hardener 02/Jul/2013","Voltage - Cutoff (VGS off) @ Id":"5V @ 1\u00b5A","Datasheets":"PMBFJ111-113","FET Type":"N-Channel","PCN Packaging":"Date Code Extended 18/Jul/2013 Lighter Reels 02/Jan/2014","Voltage - Breakdown (V(BR)GSS)":"40V","Drain to Source Voltage (Vdss)":"40V","Standard Package":"3,000","Online Catalog":"N-Chann...
1948 Bytes - 09:23:40, 29 November 2024
Nxp.com/PMBFJ112T/R
{"Drain-Gate Voltage (Max)":"-40 V","Gate-Source Voltage (Max)":"-40 V","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Channel Type":"N","Drain-Source Volt (Max)":"40 V","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-236AB","Configuration":"Single","Pin Count":"3","Operating Temperature (Min)":"-65C"}...
1175 Bytes - 09:23:40, 29 November 2024
Nxp.com/PMBFJ112TRL13
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"50 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"40 V","Transisto...
1373 Bytes - 09:23:40, 29 November 2024
Semiconductors.philips.com/PMBFJ112T/R
{"C(iss) Max. (F)":"28.0p","Absolute Max. Power Diss. (W)":"300m","@V(GS) (V) (Test Condition)":"15.0","r(DS)on Max. (Ohms)":"50.0","@V(DS) (V) (Test Condition)":"0","V(GS)off Min. (V)":"1.0","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"40.0","@I(D) (A) (Test Condition)":"1.0u","Package":"TO-236","I(DSS) Min. (A)":"5.0m","Military":"N","V(GS)off Max. (V)":"5.0","I(G) Max. (A)":"50.0m","V(BR)DSS (V)":"40.0"}...
966 Bytes - 09:23:40, 29 November 2024
