Product Datasheet Search Results:

PMBF4393.pdf1 Pages, 118 KB, Scan
PMBF4393
N/a
Semiconductor Master Cross Reference Guide
PMBF4393T/R.pdf1 Pages, 42 KB, Original
PMBF4393T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
PMBF4393.pdf9 Pages, 328 KB, Original
PMBF4393
Nxp Semiconductors
JFET N-CH 40V 5MA SOT23 - PMBF4393,215
PMBF4393,215.pdf9 Pages, 328 KB, Original
PMBF4393,215
Nxp Semiconductors
JFET N-CH 40V 5MA SOT23 - PMBF4393,215
PMBF4393@215.pdf5 Pages, 164 KB, Original
PMBF4393T/R.pdf7 Pages, 35 KB, Original
PMBF4393T/R
Nxp Semiconductors / Philips Semiconductors
N-channel FETs - CRS: 3.5 pF; I<sub>DSS</sub>: 5 to 30 mA; I<sub>DSS</sub> max.: 30 mA; I<sub>DSS</sub> min.: 5 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 100 Ohm; t<sub>off</sub>: 50 ns; t<sub>on</sub>: 15 ns; -V(P)GS: 0.5 to 3 V; V<sub>(P)GS</sub>: 0.5 V; V<sub>(P)GS</sub>: 3 V; V<sub>DS</sub>max: 40 V
PMBF4393TRL13.pdf7 Pages, 35 KB, Original
PMBF4393TRL13
Nxp
3 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET

Product Details Search Results:

Nxp.com/PMBF4393
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0030 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"100 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Bre...
1472 Bytes - 09:44:31, 26 November 2024
Nxp.com/PMBF4393,215
{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Photos":"SOT-23-3","Standard Package":"1","PCN Design/Specification":"Resin Hardener 02/Jul/2013","Voltage - Cutoff (VGS off) @ Id":"500mV @ 1nA","Datasheets":"PMBF4391-4393","FET Type":"N-Channel","PCN Packaging":"Lighter Reels 02/Jan/2014","Voltage - Breakdown (V(BR)GSS)":"40V","Drain to Source Voltage (Vdss)":"40V","Resistance - RDS(On)":"100 Ohm","Online Catalog":"N-Channel ...
1842 Bytes - 09:44:31, 26 November 2024
Nxp.com/PMBF4393@215
847 Bytes - 09:44:31, 26 November 2024
Nxp.com/PMBF4393 T/R
{"Drain-Gate Voltage (Max)":"40 V","Gate-Source Voltage (Max)":"-40 V","Continuous Drain Current":"0.03 A","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Configuration":"Single","Pin Count":"3","Drain-Source Volt (Max)":"40 V","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-236AB","Channel Type":"N","Drain Current (Max)":"0.03 A","Operating Temperature (Min)":"-65C"}...
1440 Bytes - 09:44:31, 26 November 2024
Nxp.com/PMBF4393TRL13
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0030 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"100 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"40 V","Transistor Appl...
1407 Bytes - 09:44:31, 26 November 2024
Semiconductors.philips.com/PMBF4393T/R
{"C(iss) Max. (F)":"14p","Absolute Max. Power Diss. (W)":"250m","@V(GS) (V) (Test Condition)":"0","r(DS)on Max. (Ohms)":"100","@V(DS) (V) (Test Condition)":"20","V(GS)off Min. (V)":".5","I(GSS) Max. (A)":"1.0n","V(BR)GSS (V)":"40","@I(D) (A) (Test Condition)":"1n","Package":"TO-236","I(DSS) Min. (A)":"5m","Military":"N","V(GS)off Max. (V)":"3.0","I(G) Max. (A)":"50m","I(DSS) Max. (A)":"30m","V(BR)DSS (V)":"40"}...
973 Bytes - 09:44:31, 26 November 2024

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