LPT80A-Z Phototransistor IR Chip Silicon 850nm 2-Pin
From OSRAM OPTO SEMICONDUCTORS
| Peak Wavelength | 850(nm) |
| Collector Current (DC) | 0.05(A) |
| Collector-Emitter Sat Volt (max) | 0.15(V) |
| Collector-Emitter Voltage | 30(V) |
| Dark Current | 3(nA) |
| Emitter-Collector Voltage (Max) | 7(V) |
| Fall Time | 10000(ns) |
| Half-Intensity Angle | 70(deg) |
| Light Current | 3200(uA) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -40C to 100C |
| Operating Temperature Classification | Industrial |
| Peak Wavelength | 850(nm) |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| Power Dissipation | 0.1(W) |
| Rad Hardened | No |
| Rise Time | 10000(ns) |
