FW513TL
0.35 A, 600 V, 7.6 ohm, N-CHANNEL, Si, POWER, MOSFET

From ON Semiconductor L.L.C.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V
Drain Current-Max (ID)0.3500 A
Drain-source On Resistance-Max7.6 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionSC-87, SOP-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)1.4 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links