2SK4120LS
10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From ON Semiconductor L.L.C.

StatusACTIVE
Avalanche Energy Rating (Eas)318 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min450 V
Drain Current-Max (ID)10 A
Drain-source On Resistance-Max0.6800 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-220FI(LS), 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max2 W
Pulsed Drain Current-Max (IDM)34 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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