2SK3912 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-126
From ON Semiconductor L.L.C.
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 10 A |
Drain-source On Resistance-Max | 0.0920 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | TO-126ML, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Power Dissipation Ambient-Max | 1 W |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |