2SD1935-7
Si NPN LP HF BJT

From Sanyo Semiconductor

@Freq. (Hz) (Test Condition)1.0M
@I(B) (A) (Test Condition)20m
@I(C) (A) (Test Condition)50m
@V(CBO) (V) (Test Condition)12
@V(CE) (V) (Test Condition)2.0
Absolute Max. Power Diss. (W)200m
C(obo) (Max) (F)10p
I(C) Abs.(A) Collector Current800m
I(CBO) Max. (A)100n
MilitaryN
PackageTO-236var
V(BR)CBO (V)15
V(BR)CEO (V)15
V(CE)sat Max.(V)200m
f(T) Min. (Hz) Transition Freq200M
h(FE) Max. Current gain.600
h(FE) Min. Static Current Gain300
h(fe) Min. SS Current gain.300

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