PDTA123JT,215
TRANS PREBIAS PNP 250MW TO236AB

From NXP Semiconductors

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
DatasheetsPDTA123JU T/R
FamilyTransistors (BJT) - Single, Pre-Biased
Frequency - Transition-
Mounting TypeSurface Mount
Online CatalogPNP Pre-biased Transistors
Other Names568-11231-2 934055395215 PDTA123JT T/R PDTA123JT T/R-ND PDTA123JT,215-ND
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingTape & Reel (TR)
Power - Max250mW
Product PhotosSOT-23-3
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
Series-
Standard Package3,000
Supplier Device PackageSOT-23 (TO-236AB)
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max)50V

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