PDTA123JT,215 TRANS PREBIAS PNP 250MW TO236AB
From NXP Semiconductors
Category | Discrete Semiconductor Products |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Datasheets | PDTA123JU T/R |
Family | Transistors (BJT) - Single, Pre-Biased |
Frequency - Transition | - |
Mounting Type | Surface Mount |
Online Catalog | PNP Pre-biased Transistors |
Other Names | 568-11231-2 934055395215 PDTA123JT T/R PDTA123JT T/R-ND PDTA123JT,215-ND |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Packaging | Tape & Reel (TR) |
Power - Max | 250mW |
Product Photos | SOT-23-3 |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
Series | - |
Standard Package | 3,000 |
Supplier Device Package | SOT-23 (TO-236AB) |
Transistor Type | PNP - Pre-Biased |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |