BLF3G21-30
Trans RF MOSFET N-CH 65V 4.5A 3-Pin LDMOST

From NXP SEMICONDUCTORS

ApplicationUHF
Channel ModeEnhancement
Channel TypeN
Continuous Drain Current4.5 A
Drain Current (Max)4.5 A
Drain Efficiency43 %
Drain Efficiency (Typ)43 %
Drain Source Resistance (Max)300(Typ) mohm
Drain Source Voltage (Max)65 V
Drain-Source On-Res0.3 ohm
Drain-Source On-Volt65 V
Forward Transconductance (Typ)3 S
Frequency (Max)2200 MHz
Gate-Source Voltage (Max)�15 V
MountingScrew
Number of Elements1
Operating Temp Range-65C to 200C
Operating Temperature ClassificationMilitary
Output Power (Max)36W
Package TypeLDMOST
Pin Count3
PolarityN
Power Gain 16 dB
Rad HardenedNo
Reverse Capacitance (Typ)1.7@28V pF
Screening LevelMilitary
TypeRF MOSFET
VSWR (Max)10

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