BLF3G21-30 Trans RF MOSFET N-CH 65V 4.5A 3-Pin LDMOST
From NXP SEMICONDUCTORS
Application | UHF |
Channel Mode | Enhancement |
Channel Type | N |
Continuous Drain Current | 4.5 A |
Drain Current (Max) | 4.5 A |
Drain Efficiency | 43 % |
Drain Efficiency (Typ) | 43 % |
Drain Source Resistance (Max) | 300(Typ) mohm |
Drain Source Voltage (Max) | 65 V |
Drain-Source On-Res | 0.3 ohm |
Drain-Source On-Volt | 65 V |
Forward Transconductance (Typ) | 3 S |
Frequency (Max) | 2200 MHz |
Gate-Source Voltage (Max) | �15 V |
Mounting | Screw |
Number of Elements | 1 |
Operating Temp Range | -65C to 200C |
Operating Temperature Classification | Military |
Output Power (Max) | 36W |
Package Type | LDMOST |
Pin Count | 3 |
Polarity | N |
Power Gain | 16 dB |
Rad Hardened | No |
Reverse Capacitance (Typ) | 1.7@28V pF |
Screening Level | Military |
Type | RF MOSFET |
VSWR (Max) | 10 |