BAP65-05
30 V, SILICON, PIN DIODE, TO-236AB

From NXP

StatusACTIVE
ApplicationATTENUATOR; SWITCHING
Breakdown Voltage-Min30 V
China RoHS CompliantYes
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance-Max0.9000 pF
Diode Element MaterialSILICON
Diode Forward Resistance-Max0.9000 ohm
Diode TypePIN DIODE
EU RoHS CompliantYes
Lead FreeYes
Minority Carrier Lifetime-Nom0.1700 us
Number of Elements2
Number of Terminals3
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Limit-Max0.2500 W
Surface MountYes
TechnologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal FinishTIN
Terminal FormGULL WING
Terminal PositionDUAL

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