P2H10M440H
60 A, 500 V, 0.085 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Nihon Inter Electronics Corporation

StatusACTIVE
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)60 A
Drain-source On Resistance-Max0.0850 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionMODULE-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)170 A
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links