11EFS2TA1B2 0.8 A, 200 V, SILICON, SIGNAL DIODE
From Nihon Inter Electronics Corporation
| Status | ACTIVE |
| Average Forward Current-Max | 0.8000 A |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | SIGNAL DIODE |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | LONG FORM |
| Rep Pk Reverse Voltage-Max | 200 V |
| Reverse Recovery Time-Max | 0.0300 us |
| Terminal Form | WIRE |
| Terminal Position | AXIAL |
