2SK830
N-Channel Enhancement MOSFET

From NEC Electronics

@(VDS) (V) (Test Condition)20
@V(DS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)95
C(iss) Max. (F)2.6n
I(D) Abs. Drain Current (A)15
MilitaryN
PackageSIP
V(BR)DSS (V)500
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.8.0
r(DS)on Max. (Ohms)0.38

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