NT5TU512T4DY-AD 512M X 4 DDR DRAM, 0.4 ns, PBGA63
From Nanya Technology Corporation
Status | ACTIVE-UNCONFIRMED |
Access Mode | MULTI BANK PAGE BURST |
Access Time-Max (tRAC) | 0.4000 ns |
Memory Density | 2.15E9 deg |
Memory IC Type | DDR DRAM |
Memory Width | 4 |
Mfr Package Description | BGA-63 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 63 |
Number of Words | 5.37E8 words |
Number of Words Code | 512M |
Operating Mode | SYNCHRONOUS |
Organization | 512M X 4 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH |
Supply Voltage-Max (Vsup) | 1.9 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | Yes |
Technology | CMOS |
Terminal Form | BALL |
Terminal Pitch | 0.8000 mm |
Terminal Position | BOTTOM |